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Autori: Ristic Goran S

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Naslov A new microcontroller-based RADFET dosimeter reader (Article)
Autori Vasovic Nikola D Ristic Goran S  
Info RADIATION MEASUREMENTS, (2012), vol. 47 br. 4, str. 272-276
Projekat Ministry of Science and Technology Development of the Republic of Serbia[43011]; European Commission[207 122 RADDOS]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Defect Behaviors During High Electric Field Stress of p-Channel Power MOSFETs (Article)
Autori Ristic Goran S  
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2012), vol. 12 br. 1, str. 94-100
Projekat Ministry of Education and Science of the Republic of Serbia[III43011]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov A system for gas electrical breakdown time delay measurements based on a microcontroller (Article)
Autori Todorovic Miomir Vasovic Nikola D Ristic Goran S  
Info MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 1, str. -
Projekat Ministry of Education and Science of the Republic of Serbia[43011]; European Commission[207 122 RADDOS]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) (Article)
Autori Ristic Goran S  Vasovic Nikola D Kovacevic Milojko S  Jaksic Aleksandar B 
Info NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2011), vol. 269 br. 23, str. 2703-2708
Projekat Ministry of Education and Science of the Republic of Serbia[11143011]; European Commission[207 122 RADDOS]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C (Article)
Autori Ristic Goran S  Vasovic Nikola D 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2011), vol. 26 br. 8, str. -
Projekat Ministry of Science and Technology Development of the Republic of Serbia[43011]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation (Article)
Autori Jelenkovic Emil V Ristic Goran S  Pejovic Milic M  Jevtic Milan M Jha Shrawan K Videnovic-Misic Mirjana S  Pejovic Momcilo M Tong KY 
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2011), vol. 44 br. 1, str. -
Projekat Hong Kong Polytechnic University ; Ministry of Science and Technology Development of Republic of Serbia [141008B]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Thermal and UV annealing of irradiated pMOS dosimetric transistors (Article)
Autori Ristic Goran S  
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2009), vol. 42 br. 13, str. -
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article)
Autori Jha Shrawan K Jelenkovic Emil V Pejovic Milic M  Ristic Goran S  Pejovic Momcilo M Tong KY Surya C Bello I Zhang WJ 
Info MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40
Projekat Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve (Article)
Autori Nesic Nikola T Ristic Goran S  Karamarkovic Jugoslav P  Pejovic Momcilo M 
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 22, str. -
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors (Review)
Autori Ristic Goran S  
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 2, str. -
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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