Autori: Ristic Goran S
Naslov | A new microcontroller-based RADFET dosimeter reader (Article) |
Autori | Vasovic Nikola D Ristic Goran S |
Info | RADIATION MEASUREMENTS, (2012), vol. 47 br. 4, str. 272-276 |
Projekat | Ministry of Science and Technology Development of the Republic of Serbia[43011]; European Commission[207 122 RADDOS] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Defect Behaviors During High Electric Field Stress of p-Channel Power MOSFETs (Article) |
Autori | Ristic Goran S |
Info | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2012), vol. 12 br. 1, str. 94-100 |
Projekat | Ministry of Education and Science of the Republic of Serbia[III43011] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | A system for gas electrical breakdown time delay measurements based on a microcontroller (Article) |
Autori | Todorovic Miomir Vasovic Nikola D Ristic Goran S |
Info | MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 1, str. - |
Projekat | Ministry of Education and Science of the Republic of Serbia[43011]; European Commission[207 122 RADDOS] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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Naslov | The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) (Article) |
Autori | Ristic Goran S Vasovic Nikola D Kovacevic Milojko S Jaksic Aleksandar B |
Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2011), vol. 269 br. 23, str. 2703-2708 |
Projekat | Ministry of Education and Science of the Republic of Serbia[11143011]; European Commission[207 122 RADDOS] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C (Article) |
Autori | Ristic Goran S Vasovic Nikola D |
Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2011), vol. 26 br. 8, str. - |
Projekat | Ministry of Science and Technology Development of the Republic of Serbia[43011] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation (Article) |
Autori | Jelenkovic Emil V Ristic Goran S Pejovic Milic M Jevtic Milan M Jha Shrawan K Videnovic-Misic Mirjana S Pejovic Momcilo M Tong KY |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2011), vol. 44 br. 1, str. - |
Projekat | Hong Kong Polytechnic University ; Ministry of Science and Technology Development of Republic of Serbia [141008B] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Thermal and UV annealing of irradiated pMOS dosimetric transistors (Article) |
Autori | Ristic Goran S |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2009), vol. 42 br. 13, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article) |
Autori | Jha Shrawan K Jelenkovic Emil V Pejovic Milic M Ristic Goran S Pejovic Momcilo M Tong KY Surya C Bello I Zhang WJ |
Info | MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40 |
Projekat | Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve (Article) |
Autori | Nesic Nikola T Ristic Goran S Karamarkovic Jugoslav P Pejovic Momcilo M |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 22, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors (Review) |
Autori | Ristic Goran S |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 2, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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